Navitas Semiconductor has reported an extension of its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL package designed for demanding, high-power, high-reliability applications.
Combining high-power capability and low on-resistance of 20 to 55 mΩ, the company reports its new 650 V SiC MOSFETs have been optimized for fast switching speed, efficiency, and increased power density demanded by applications such as AI data center power supplies, EV charging and energy storage and solar solutions.
Navitas says that GeneSiC products use a proprietary ‘trench-assisted planar’ technology providing efficient performance over the temperature range. G3F MOSFETs deliver high-speed performance with up to 25°C lower case temperatures and up to three times longer life than alternative SiC products.
Navitas’ latest 4.5 kW AI power system reference design features the G3F45MT60L (650V 40 mΩ TOLL) G3F SiC MOSFET in an interleaved CCM-TP PFC topology. Complemented by the NV6515 (650V 35mΩ TOLL) GaNSafe™ Power IC in the LLC stage, this solution has a peak efficiency above 97% and achieves a power density of 137 W/inch³. For EV battery systems rated at 400 V, G3F in TOLL is suitable for on-board chargers, DC-DC converters, and traction drives ranging from 6.6 to 22 kW.
The surface-mount TOLL package offers:
+ A reduction in junction-to-case thermal resistance (RTH,J-C) by nine percent
+ Thirty percent smaller PCB footprint
+ Fifty percent lower height
+ Sixty percent smaller size compared to traditional D2PAK-7L
Additionally minimal package inductance of only two nH ensures excellent fast-switching performance with lowest dynamic losses achieved.
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