VMAX, a Chinese manufacturer of power electronics and motor drives for EVs, has chosen the new CoolSiC™ IGBT and Schottky Diode from Infineon for its upcoming 6.6 kW OBC/DCDC on-board chargers.
The components from Infineon are housed in a D²PAK package and merge ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes, providing a balanced cost-performance ratio for both hard and soft switching topologies.
Infineon mentioned that the hybrid discrete benefits from very low switching losses at switching speeds above 50 kHz, thanks to its fast, hard switching TRENCHSTOP 5 650 V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode. This makes the device an excellent choice for high-power electric vehicle charging systems. The robust 5th generation CoolSiC Schottky diode offers increased robustness against surge currents, enhancing reliability. The diffusion soldering of the SiC diode has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability. These features enable optimum system reliability and longevity, meeting the stringent requirements of the automotive industry. The product also features a pin-to-pin compatible design based on the widely used D²PAK package.
The CoolSiC™ Hybrid Discrete with TRENCHSTOP™ 5 Fast-Switching IGBT co-packed with CoolSiC™ Schottky Diode G5 is now available. More information can be found at http://www.infineon.com/cms/en/product/power/igbt/coolsic-hybrid-devices/hybrid-discretes/aikbe50n65rf5/.
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